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BCR 400W Active Bias Controller
Characteristics * Supplies stable bias current even at low battery voltage
and extreme ambient temperature variation
* Low voltage drop of 0.7V Application notes * Stabilizing bias current of NPN transistors and FETs from
from less than 0.2mA up to more than 200mA
* Ideal supplement for SIEGET and other RF transistors * also usable as current source up to 5mA
Type
Marking Ordering Code Pin Configuration
Package
BCR 400W W4s
Q62702-C2481 1 GND/ENPN 2 Contr/BNPN 3 VS 4 Rext/CNPN SOT-343
(ENPN,BNPN,CNPN are electrodes of a stabilized NPN transistor)
Maximum Ratings Parameter Supply voltage Control current Control voltage Reverse voltage between all terminals Total power dissipation, TS = 117C Junction temperature Storage temperature Thermal Resistance Junction ambient
1)
Symbol
Values 18 10 16 0.5 330 150 - 65 ... + 150 170 100
Unit V mA V mW C
VS IContr. VContr. VR Ptot Tj Tstg RthJA RthJS
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
Nov-27-1996
BCR 400W
Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC Characteristics Additional current consumption Values typ. max. Unit
I0
20 0.1 40
A mA -
VS = 3 V
Lowest stabilizing current
Imin
VS = 3 V
DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage
VSmin
1.6 0.65 0.08 0.15 0.2 -
V
IB (NPN) < 0.5 mA
Voltage drop (VS - VCE)
Vdrop
IC/IC IC/IC IC/IC %/K VS/VS
hFE/hFE
IC = 25 mA
Change of IC versus hFE
hFE > 50
Change of IC versus VS
VS > 3 V
Change of IC versus TA
Semiconductor Group
2
Nov-27-1996
BCR 400W
Collector current IC = f(hFE) IC and hFE refer to stabilized NPN Transistor Parameter Rext. ()
10 3 mA
Collector Current IC = f(VS) of stabilized NPN Transistor Parameter Rext. ()
10 3 mA
2.1 5.9 12.4
IC
10 2
5.9
IC
10 2
10 1
67
10 1
67
10 0
760
10 0
760
4.3k 10 -1 0 10 -1 0
50
100
150
200
250
350 hFE
2
4
6
8
V VS
11
Voltage drop Vdrop = f(IC)
Collector current IC = f(Rext.) of stabilized NPN Transistor
1.0
10 3
mA
V drop
V
IC
10 2
0.8 10 1 0.7
10 0 0.6
0.5 -2 10
10
-1
10
0
10
1
10
2
mA 10
3
10 -1 0 10
10
1
10
2
10
3
IC
Ohm Rext.
Semiconductor Group
3
Nov-27-1996
BCR 400W
Collector current TA = f(IC) of stabilized NPN Transistor Parameter: Rext.()
10 3 mA
Control current I = f(Rext.) in current source application
10 1
IC
2.2 10 2 6
IContr.
mA
26 10 1 65 10 0
290 10
0
760
4.3k 10
-1
-40 -20
0
20
40
60
80 100 120 C 160 TA
10 -1 -1 10
10
0
10
1
10
2
KOhm Rext.
Control current I = f(TA) in current source application
Control current I = f(VS) in current source application
1.5 mA 1.3
2.0 mA
IContr.
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -20
IContr.
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
0
20
40
60
C TA
100
0
1
2
3
4
5
6
7
8
V VS
10
Semiconductor Group
4
Nov-27-1996
BCR 400W
Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy
400
mW
Ptot
300
Note that up to TS = 130C
TS TA
it is not possible to exceed Ptot respecting the maximum ratings of VS and IContr. The collector or drain current (respectively) of the stabilized RF transistor
250
200
150
100
does not affect BCR 400 directly, as it provides just the base current.
50 0 0 20 40 60 80 100 120 C 150 TA ,TS
Typical application for GaAs FET with active bias controller
Semiconductor Group
5
Nov-27-1996
BCR 400W
RF transistor controlled by BCR400
Be aware that BCR 400 stabilizes bias current of transistors in an active control loop. In order to avoid loop oscillation (hunting), time constants must be chosen adequately, i.e. C1 >= 10 x C2
RX/TX antenna switch, compatible to control logic and working at wide battery voltage range
Semiconductor Group
6
Nov-27-1996
BCR 400W
Low voltage reference
Precision timer with BCR 400
providing constant charge current
Semiconductor Group
7
Nov-27-1996

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